238 Layer

SK Hynix announced this week that it had started volume production of its 238-layer TLC NAND memory. The new device promises higher bit density and lower NAND bits cost for the manufacturer and enables ultra-high-performance SSDs as it features a very high interface speed of 2400 MT/s. SK Hynix's first 238-layer 3D TLC NAND device has a 512 Gb capacity (64 GB). It has a number of benefits when compared to its 176-layer predecessor, including a 34% higher manufacturing efficiency (i.e., smaller die size, lower usage of materials, and expensive process steps, etc.), a 21% lower power consumption during read operations thanks to the ONFI 5.0 interface with the NV-LPDDR4 signaling method, and a 2400 MT/s interface transfer rate, which is a 50% increase. The latter...